2SD2167 transistors 1/1 power transistor (31 4v, 2a) 2SD2167 ! features 1) built-in zener diode between collector and base. 2) zener diode has low voltage dispersion. 3) strong protection against reverse power surges due to low loads. 4) p c = 2 w (on 40 40 0.7mm ceramic board) ! external dimensions (units : mm) (3) emitter (2) collector (1) base eiaj : sc-62 1.5 0.4 1.5 0.4 1.6 0.5 3.0 0.4 1.5 ( 3 ) 4.5 ( 1 ) ( 2 ) 0.5 4.0 2.5 1.0 rohm : mpt3 ! absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 31 4 31 4 5 2 0.5 2 150 ? 55 + 150 unit v v v a(dc) 3 2 1 a(pulse) w w c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature 1 pw = 20ms , duty = 1 / 2 2 when mounted on a 40 40 0.7 mm ceramic board. ? ? ? ? ! packaging specifications and h fe type 2SD2167 mpt3 npq t100 dl ? 1000 package h fe code basic ordering unit (pieces) marking denotes h fe ? ! electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob 27 27 5 ? ? ? 56 ? ? ? ? ? ? ? ? ? 100 25 35 35 ? 1 1 1 270 ? ? v v v a a v ? mhz pf i c = 50 a i c = 1ma i e = 50 a v cb = 20v v eb = 5v i c /i b = 2a/0.2a ? 0.25 0.5 v i c /i b = 1a/50ma v ce /i c = 3v/0.5a v ce = 3v , i e = ? 0.5a , f = 30mhz v cb = 10v , i e = 0a , f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance measured using pulse current. ? ? ? ?
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